ACST太赫兹 混频 二极管

structure
type

nominal parameters

short structure
description

junction
capacitance
cj0(ff/anode)

total
capacitance
ctot(ff)

series
resistancers/
differential
resistancerdiff(ω)

breakdown
voltage
ubd(v)

2maf1.0

1.0

5.5

25

-

two varistors in anti-parallel configuration on 5 µm thick transferred membrane-substrate for ultimate mm/sub-mm wave performance.

2maf1.5

1.5

6.5

18

-

2maf2.3

2.3

8.5

13

-

2maf3.2

3.2

11

11

-

2mam1.5

1.5

8

18

-

two varistors in anti-parallel configuration on 4 µm thick algaas-substrate.

3mam3.2

3.2

11.4

13

-

3mam4.6

4.6

14.2

11

-

3mas1.5

1.5

8

18

-

two varistors in anti-parallel configuration on 10 µm thick gaas-substrate.

3mas3.2

3.2

12.4

13

-

3mas4.6

4.6

15.2

11

-

3mas8.1

8.1

21.2

9

-

3msm1.5

1.5

5.5

18

4.0

single varistor on 4 µm thick algaas-substrate.

3msm3.2

3.2

7.2

13

4.0

3msm4.6

4.6

8.6

10

4.0

3mss3.2

3.2

8.2

13

4.0

3mss4.6

4.6

9.6

10

4.0

3mss8.1

8.1

13.1

9

4.0